Dr Agnieszka Pieniążek, Institute of Physics PAS , Poland
Agnieszka Pieniążek 🌟 is an Assistant Professor at the Institute of Physics PAS, Warsaw, Poland. She completed her doctoral studies in Physical Sciences and holds master’s degrees in Analytical Chemistry and Applied Physics from leading Polish universities. Agnieszka’s research focuses on wide bandgap semiconductors, perovskites, and nanostructures, exploring their optical and electronic properties. She has authored 22 SCI and Scopus indexed articles and holds a patent for quantum nanostructures. Recognized for her Outstanding Doctoral Dissertation by the Polish Society for Crystal Growth, she continues to contribute significantly to the field of materials science and semiconductor physics.
Scopus
Education
Agnieszka Pieniążek pursued her academic journey with dedication and achievement. She completed her Doctoral Studies in Physical Sciences at the Institute of Physics PAS, Warsaw, Poland, spanning from October 2013 to June 2019. Prior to that, she earned a Master’s Degree in Analytical Chemistry from Maria Curie-Skłodowska University, Faculty of Chemistry, Lublin, Poland, during October 2008 to July 2013. Her educational foundation also includes a Master’s Degree in Applied Physics from the same university’s Faculty of Mathematics, Physics, and Computer Science, obtained between October 2007 and July 2012. 🎓
Awards
In June 2022, Agnieszka Pieniążek was honored with the Award from the Polish Society for Crystal Growth for her Outstanding Doctoral Dissertation titled “Local Optical Properties of ZnO Microrods Grown by Hydrothermal Method.” This prestigious accolade recognizes her exceptional research contributions in the field of crystal growth and semiconductor optics. Agnieszka’s dissertation delved into the intricate optical characteristics of ZnO microrods, cultivated through innovative hydrothermal techniques. Her work not only expands the understanding of semiconductor materials but also underscores her commitment to advancing scientific knowledge and applications in materials science. 🏆
Research Focus
Agnieszka Pieniążek 🌟 specializes in the research of wide bandgap semiconductors, perovskites, and nanostructures. Her work primarily revolves around investigating the optical and electronic properties of these materials, with a focus on understanding defects, structural dynamics, and their implications for optoelectronic applications. Through her studies, she explores topics such as the bandgap pressure coefficient in perovskite thin films, interdiffusion phenomena in semiconductor alloys, and the cathodoluminescence patterns of semiconductor microrods. Agnieszka’s contributions significantly advance the field of materials science, particularly in enhancing the efficiency and reliability of semiconductor devices for renewable energy and optoelectronics.
Publication Top Notes
“Can a bistable amphoteric native defect model explain the photo-induced transformation of MAPbI3 thin films?” by A. Pienia̧żek et al., Solar Energy Materials and Solar Cells, 2024, 274, 112974 📄 Cited by: 0
“Investigation of interdiffusion in thin films of ZnO/ZnCdO grown by molecular beam epitaxy” by M. Stachowicz et al., Thin Solid Films, 2023, 781, 140003 📄 Cited by: 3
“Bandgap Pressure Coefficient of a CH3NH3PbI3 Thin Film Perovskite” by A. Pienia̧żek et al., Journal of Physical Chemistry Letters, 2023, 14(28), pp. 6470–6476 📄 Cited by: 4
“Mixology of MA1-xEAxPbI3 Hybrid Perovskites: Phase Transitions, Cation Dynamics, and Photoluminescence” by M. Šimėnas et al., Chemistry of Materials, 2022, 34(22), pp. 10104–10112 📄 Cited by: 13
“Detailed surface studies on the reduction of Al incorporation into AlGaN grown by molecular beam epitaxy in the Ga-droplet regime” by D. Majchrzak et al., Vacuum, 2022, 202, 111168 📄 Cited by: 6